SILICON LABS
评估板, ISODRIVER SI826X样品包
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 0.031 ohm, -1.8 V, -1 V
晶体管, MOSFET, P沟道, -16 A, -20 V, 0.026 ohm, -4.5 V, -500 mV
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.087 ohm, 10 V, 600 mV
晶体管, MOSFET, N沟道, 6.2 A, 30 V, 24 mohm, 10 V, 1 V
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
晶体管, MOSFET, P沟道, 4.1 A, -30 V, 42 mohm, -10 V, -3 V
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 0.015 ohm, 4.5 V, 1.5 V
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
场效应管阵列, MOSFET, 双N沟道
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V
场效应管, MOSFET, N通道, 30V, 10.1A, SC-70, 整卷
场效应管, MOSFET, N沟道, 200V, 2.6A, SC-70
双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.071 ohm, -10 V, -1 V
场效应管, MOSFET, N沟道, 20V, 4.5A, POWERPACK, SC-70
双路场效应管, MOSFET, 双P沟道, -4.5 A, -12 V, 0.07 ohm, -1.8 V, -400 mV
晶体管, N沟道
晶体管, MOSFET, N沟道, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V
MOSFET, DUAL N CHANNEL, 20V, 1.5A, POWER
双路场效应管, MOSFET, 双N沟道, 1.5 A, 8 V, 0.09 ohm, 4.5 V, 800 mV
晶体管, MOSFET, N沟道, 236 A, 20 V, 0.0011 ohm, 10 V, 1.3 V
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
