SEMIKRON
晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module
晶体管, IGBT模块, 400A, 600V, SEMITRANS5
晶闸管, 1600 V, 200 mA, 696 A, 1600 A, 模块, 3 引脚
INFINEON
单晶体管, IGBT, 16.5 A, 3.1 V, 125 W, 1.2 kV, TO-247, 3 引脚
单晶体管, IGBT, 40 A, 2.4 V, 179 W, 600 V, TO-247, 3 引脚
单晶体管, IGBT, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 引脚
STMICROELECTRONICS
触发二极管, DIAC / SIDAC, 28 V, 36 V, 50 μA, SOT-23, 3 引脚
晶体管, MOSFET, N沟道, 230 mA, 60 V, 4.1 ohm, 4.5 V, 1.4 V
TEXAS INSTRUMENTS
芯片
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)
