ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
INFINEON
单晶体管, IGBT, 20 A, 1.75 V, 125 W, 430 V, TO-220AB, 3 引脚
晶体管, MOSFET, N沟道, 540 mA, 55 V, 0.346 ohm, 10 V, 1.6 V
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, MICRO FOOT-4
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
STMICROELECTRONICS
肖特基整流器, 1A, 40V, DO-41
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 110 hFE
ROHM
单晶体管 双极, NPN, 11 V, 3.2 GHz, 150 mW, 10 mA, 56 hFE
场效应管, MOSFET, N沟道, 20V, 3.2A, SOT-23
Dual MOSFET, N and P Complement, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
小信号肖特基二极管, 双系列, 25 V, 100 mA, 950 mV, 500 mA, 150 °C
单晶体管 双极, NPN, 12 V, 150 MHz, 540 mW, 2 A, 200 hFE
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
