规格：存取时间 100ns,
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 2 KB, 2K x 8位, 100 ns, EDIP
(EN)
GREENWICH INSTRUMENTS
芯片, 非易失性存储器模块 256K
(EN)
STMICROELECTRONICS
芯片, EPROM CMOS 8MB
(EN)
CYPRESS SEMICONDUCTOR
闪存, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
(EN)
CYPRESS SEMICONDUCTOR
闪存, 或非, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 256 Mbit, 16M x 16位, 并行, FBGA, 64 引脚
(EN)
CYPRESS SEMICONDUCTOR
闪存, 256 Mbit, 16M x 16位, 并行, TSOP, 56 引脚
(EN)CYPRESS SEMICONDUCTOR
闪存, 256 Mbit, 16M x 16位, 并行, TSOP, 56 引脚
(EN)
SPANSION
芯片, 闪存存储器, 512MB, 100NS, 64-BGA
(EN)
