规格：电流, Id 连续 15A,
TOSHIBA
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.3 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.231 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 55 V, 13 mohm, 5 V, 2.5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 500 V, 0.33 ohm, 10 V, 3.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 30 V, 7.5 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 20 V, 7 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 12 V, 8 mohm, 4.5 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 12 V, 8 mohm, 4.5 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 25 V, 0.005 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
(EN)
