规格：电流, Id 连续 20A,
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 44 mohm, 10 V, 2 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 250 V, 94 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 600V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 0.019 ohm, 10 V, 3 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 20 A, 200 V, 0.1 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V
(EN)
