规格：电流, Id 连续 1A,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 1A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 600V, 9.3OHM, 1A, TO-252-3
(EN)
BROADCOM LIMITED
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1 A, -30 V, 800 mohm, -10 V, -2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 380 mohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.29 ohm, 4.5 V, 700 mV
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
(EN)
