规格：电流, Id 连续 2.6A,
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 2.6A, SOT-223
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, POWERPAK
(EN)VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, SC-70, 整卷
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
