规格：电流, Id 连续 21A,
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.058 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 190 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0089 ohm, 10 V, 2.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.034 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
