规格：电流, Id 连续 28A,
INFINEON
晶体管, MOSFET, N沟道, 28 A, 150 V, 0.047 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 28A, SOIC
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 28 A, 650 V, 0.062 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 40V, 28A, TO-252
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 40 V, 19 mohm, 10 V, 2.1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 24 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.077 ohm, 5 V, 2 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
