规格：电流, Id 连续 -3.6A,
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
