规格：电流, Id 连续 30A,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 14 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 75 V, 0.0159 ohm, 10 V, 1.6 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 80V, 39A, DPAK, 整卷
(EN)
