规格：电流, Id 连续 3A,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 3A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.029 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
(EN)
