规格：电流, Id 连续 -4A,
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.04 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
