规格：电流, Id 连续 24A,
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 24 A, 1.8 kW, 30 MHz, DE-475
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 900 V, 0.42 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-220AB-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)
