规格：电流, Id 连续 5.5A,
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.031 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.031 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 2.1 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 2.5 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.037 ohm, 4.5 V, 800 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)
