
VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V

NEXPERIA
晶体管, MOSFET, P沟道, -5 A, -20 V, 0.034 ohm, -4.5 V, -700 mV

VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.036 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -12 V, 0.019 ohm, -4.5 V, -300 mV

VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.021 ohm, -10 V, -2.5 V

VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.044 ohm, -10 V, -3 V

VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC

VISHAY
晶体管, 双P沟道