规格：电流, Id 连续 6A,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 150V, 6A, D-PAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.5 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.028 ohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)VISHAY
场效应管, MOSFET, N通道, 30V, 6A, 1206, 整卷
(EN)VISHAY
场效应管, MOSFET, N通道, 20V, 6A, 1206, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)
VISHAY
场效应管阵列, MOSFET, 双N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V
(EN)
