规格：电流, Id 连续 1.1A,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, AEC-Q101, N沟道, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 450 mohm, 10 V, 3 V
(EN)
SOLID STATE
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)
SOLID STATE
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 2.7 ohm, 10 V, 1.5 V
(EN)VISHAY
场效应管, MOSFET
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 1.1 A, -12 V, 0.066 ohm, -4.5 V, 600 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, AEC-Q101, N沟道, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.1 A, 20 V, 0.195 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.1 A, 20 V, 0.195 ohm, 4.5 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)
