规格：电流, Id 连续 100A,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.9 mohm, 8 V, 1.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2 mohm, 10 V, 3 V
(EN)
