规格：电流, Id 连续 1.8A,
NEXPERIA
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -400 V, 7 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.8 A, 30 V, 0.135 ohm, 10 V, 2.6 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1.8mA
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.8 A, -30 V, 170 mohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
