规格：电压 @ Rds测量 2.5V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.022 ohm, 2.5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 20 V, 0.107 ohm, 2.5 V, 550 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, TO-236
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 20 V, 0.017 ohm, 2.5 V, 550 mV
(EN)
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
VISHAY
场效应管, MOSFET, N沟道, 20V, 7.5A, 1206
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)VISHAY
场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 3.1A TO-236, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.5 A, 20 V, 0.018 ohm, 2.5 V, 550 mV
(EN)INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
