规格：电压 @ Rds测量 4.5V,
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.6 A, 20 V, 37 mohm, 4.5 V, 700 mV
(EN)
INFINEON
场效应管, MOSFET, N沟道, 20V, 40A, 8-PQFN
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 0.016 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 9.5A, 20V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
