规格：电压 @ Rds测量 4.5V,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 5.1A, TSOP
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 4.5A, POWERPAK SC-70
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, SuperSOT-6
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
(EN)INFINEON
场效应管, MOSFET, N沟道, 2W, 6-TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 7.8A, WDFN6
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 7.3 A, 12 V, 0.015 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
(EN)
VISHAY
Transistor Polarity:N Channel
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.066 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 19 A, 20 V, 0.0022 ohm, 4.5 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.031 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 1.3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
