规格：电压 @ Rds测量 4.5V,
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 20V, 0.16OHM, 1.2A, SC-70-6
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 1.2 A, 20 V, 0.132 ohm, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 20V, 5.2A, TSSOP-8
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.2 A, 20 V, 120 mohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 600mA, SOT-416-3
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
(EN)
