规格：电压 @ Rds测量 -4.5V,
NEXPERIA
晶体管, MOSFET, P沟道, -1.2 A, -20 V, 0.35 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 8A POWERPAK
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, POWERPAK SC-70
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -6.2 A, -12 V, 0.019 ohm, -4.5 V, -600 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -12 V, 0.017 ohm, -4.5 V, -0.9 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8
(EN)
VISHAY
晶体管, P沟道
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
