规格：电压 @ Rds测量 -4.5V,
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 4.2A, SC-88
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)INFINEON
场效应管, MOSFET, P沟道, -12V, -16A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -7.8A, -20V, MicroFET
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV
(EN)
ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.028 ohm, -4.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -8V, SC-88
(EN)VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)
