规格：电压 @ Rds测量 4V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 mA, 30 V, 2.9 ohm, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1 ohm, 4 V, 1.4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 5 ohm, 4 V, 1.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.085 ohm, 4 V, 850 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 200 mA, 20 V, 0.7 ohm, 4 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
