规格：电压 @ Rds测量 5V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, TO-220, 18A, 200V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, D2-PAK
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 60 V, 100 mohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 28 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 50 V, 47 mohm, 5 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3780 μohm, 5 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 180 mA, 200 V, 10 ohm, 5 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2200 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)
