规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0093 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.4 ohm, 10 V, 1.2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 380mA SOT-23
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 mA, 250 V, 30 ohm, 10 V, -1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 280 mA, 60 V, 2 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 2.2 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 2.7A, SSOT
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 30 V, 12 mohm, 10 V, 2 V
(EN)
