规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 6.5 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 250 V, 0.019 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.1 A, 600 V, 0.47 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0168 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 12.5A, SOIC
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 1.2 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 24 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 300V, 38A, TO-3PN
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 69 A, 100 V, 0.0116 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
(EN)
