规格：电压 @ Rds测量 10V,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0016 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0047 ohm, 10 V, 3.1 V
(EN)
INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 43.3 A, 650 V, 0.072 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 49A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 200 V, 25 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 18A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 0.0026 ohm, 10 V, 2.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, SuperFET III, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 30 V, 0.0099 ohm, 10 V, 1.57 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0015 ohm, 10 V, 3 V
(EN)
