规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 150 V, 0.047 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 375A, 直接FET, L8-11
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 0.23A, SOT-23-3
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 24 A, 100 V, 0.026 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.042 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0021 ohm, 10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 6400 μohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0082 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)
