规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 80V, SOIC
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 8.5A
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0052 ohm, 10 V, 2.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 14 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 400 V, 0.14 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.058 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.1 ohm, 10 V, 4 V
(EN)
