规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3
(EN)
