规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管阵列, MOSFET, N/P沟道, 30V, SOIC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 38 A, 250 V, 75 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 104 A, 55 V, 8 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V
(EN)
