规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 160 A, 40 V, 0.0036 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.8 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 250 V, 0.038 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.008 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150W, TO-262
(EN)
