规格：电压 @ Rds测量 10V,
VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 75 V, 0.0176 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 1.65 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 172 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.0056 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0025 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0044 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 190 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 15 A, 500 V, 330 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 100V, 85A, D2PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.019 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
