规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.7 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 195A, TO-247AC-3
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 200 V, 0.1 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0089 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0033 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 45 V, 0.038 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00078 ohm, 10 V, 2.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 85A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0035 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 57.7 A, 650 V, 0.067 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 54 A, 30 V, 9.5 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 6 A, 60 V, 0.046 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 60A, POWERPAK SO-8
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.79 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, 通用, N沟道, 49 A, 55 V, 20 mohm, 10 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
(EN)
