规格：电压 @ Rds测量 10V,
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 500 V, 380 mohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 650 V, 0.171 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 190 mohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.8 ohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0129 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)
