规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 1.5 kV, 2.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 4.6A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 37 A, 600 V, 30 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.9 A, 30 V, 27 mohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 650V, 7A, TO-252-3
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 52A TO-220FP
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
