规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 0.0115 ohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0086 ohm, 10 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0069 ohm, 10 V, 2.35 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 187 A, 40 V, 0.0016 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 60 V, 0.0043 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 80 V, 0.011 ohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0137 ohm, 10 V, 3.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.005 ohm, 10 V, 2 V
(EN)
