规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0031 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 30 V, 2.8 mohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.066 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 4.6 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
