规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 900 V, 0.42 ohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, X2-Class, N沟道, 76 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3.3 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2400 μohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 170 A, 60 V, 5.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 75 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 90 A, 250 V, 33 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0082OHM, 9A, SOIC-8
(EN)
