规格：电压 @ Rds测量 10V,
VISHAY
功率场效应管, MOSFET, N沟道, 31.6 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 87 A, 650 V, 0.025 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.0019 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V
(EN)INFINEON
MOSFET, N-CH, 75V, 183A, TO-220AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0019 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 32 A, 1.2 kV, 350 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 105 A, 30 V, 6 mohm, 10 V, 2.25 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 93 A, 30 V, 4.9 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)
