规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
ROHM
晶体管, MOSFET, N沟道, 7 A, 500 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 600 V, 130 mohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 338 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 200 V, 150 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)
