规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 60 A, 600 V, 75 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 120 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 75A, TO-220AB-3
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 500mA SOT-23
(EN)
SEMIKRON
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.007 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 52 A, 900 V, 160 mohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
