规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 85A, TO-263AB-3
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 A, 75 V, 0.0016 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 280 mA, 60 V, 2 ohm, 10 V, 2.1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 0.7 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.28 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)
