规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.034 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2.9 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)
SOLID STATE
晶体管, MOSFET, MOSPOWER, N沟道, 900 mA, 90 V, 3 ohm, 10 V, 1.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.038 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.034 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0031 ohm, 10 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 60 V, 0.006 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V
(EN)
