规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75A, TO-247
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 180A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0058 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 2.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0107 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 380 mA, 60 V, 1.19 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V
(EN)
